Characterization of gallium nitride materials for high-frequency and high-power devices
In recent years, a significant progress has been made in the development of III-V Nitrides based devices. Materials such as Aluminium Nitride, Gallium Nitride, Indium Nitride and their alloys have been attractive due to the wide band-gap characteristic. AlGaN/GaN based heterostructures are consi...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/10356/17065 |