On the practical limitations for the generation of Gunn oscillations in highly doped GaN diodes

On the practical limitations for the generation of Gunn oscillations in highly doped GaN diodes

Planar Gunn diodes based on doped GaN active layers with different geometries have been fabricated and characterized. Gunn oscillations have not been observed due to the catastrophic breakdown of the diodes for applied voltages around 20-25 V, much below the bias theoretically needed for the onset o...

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Bibliographic Details
Main Authors: Garcia-Sanchez, S., Daher, M. Abou, Lesecq, M., Huo, Lili, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Iniguez-De-La-Torre, I., Vasallo, B. G., Perez, S., Gonzalez, T., Mateos, J.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2023
Subjects:
Engineering::Electrical and electronic engineering
Gunn Diodes
Monte Carlo Simulations
Online Access:https://hdl.handle.net/10356/170741

Internet

https://hdl.handle.net/10356/170741

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