Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—experimental evidence of the hole trap state
Multichannel high electron mobility transistor (MC-HEMT) heterostructures are one of the choices for improved power performance of GaN HEMTs. By comparing the experimentally obtained two-dimensional electron gas (2DEG) concentration of unintentionally doped (UID) AlGaN/GaN MC-HEMTs with simulated 2D...
Main Authors: | , , , |
---|---|
Other Authors: | |
Format: | Journal Article |
Language: | English |
Published: |
2023
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/171425 |