Analysis of thermodynamic resistive switching in ZnO-based RRAM device

Analysis of thermodynamic resistive switching in ZnO-based RRAM device

Due to its excellent performance, resistive random access memory (RRAM) has become one of the most appealing and promising types of memory. However, RRAM has significant problems concerning understanding and modelling the resistive-switching mechanism, despite being very promising from the perspecti...

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Detaylı Bibliyografya
Asıl Yazarlar: Bature, Usman Isyaku, Nawi, Illani Mohd, Khir, Mohd Haris Md, Zahoor, Furqan, Hashwan, Saeed S Ba, Algamili, Abdullah Saleh, Abbas, Haider
Diğer Yazarlar: School of Computer Science and Engineering
Materyal Türü: Journal Article
Dil:English
Baskı/Yayın Bilgisi: 2023
Konular:
Engineering::Electrical and electronic engineering
Resistive Switching
Thermodynamic Process
Online Erişim:https://hdl.handle.net/10356/172044

Internet

https://hdl.handle.net/10356/172044

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