InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC

InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC

In recent years, flexible nitride LEDs have been developed for applications in fields such as lighting, displays but also medicine and biology. Said nanowire-based flexible LEDs are made of InGaN/GaN core-shell nanowires encapsulated in a polymer matrix, which is peeled off and constitutes the final...

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Podrobná bibliografie
Hlavní autoři: Bosch, Julien, Valera, Lucie, Mastropasqua, Chiara, Michon, Adrien, Nemoz, Maud, Portail, Marc, Zúñiga-Pérez, Jesús, Tchernycheva, Maria, Alloing, Blandine, Durand, Christophe
Další autoři: School of Physical and Mathematical Sciences
Médium: Journal Article
Jazyk:English
Vydáno: 2023
Témata:
Engineering::Electrical and electronic engineering
Science::Physics
Graphene
Quantum Wells
On-line přístup:https://hdl.handle.net/10356/172218

Internet

https://hdl.handle.net/10356/172218

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