Electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals heterostructure for in-sensor reservoir computing at the optical communication band

Electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals heterostructure for in-sensor reservoir computing at the optical communication band

Although 2D materials are widely explored for data storage and neuromorphic computing, the construction of 2D material-based memory devices with optoelectronic responsivity in the short-wave infrared (SWIR) region for in-sensor reservoir computing (RC) at the optical communication band still remains...

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Bibliographic Details
Main Authors: Zha, Jiajia, Shi, Shuhui, Chaturvedi, Apoorva, Huang, Haoxin, Yang, Peng, Yao, Yao, Li, Siyuan, Xia, Yunpeng, Zhang, Zhuomin, Wang, Wei, Wang, Huide, Wang, Shaocong, Yuan, Zhen, Yang, Zhengbao, He, Qiyuan, Tai, Huiling, Teo, Edwin Hang Tong, Yu, Hongyu, Ho, Johnny C., Wang, Zhongrui, Zhang, Hua, Tan, Chaoliang
Other Authors: School of Materials Science and Engineering
Format: Journal Article
Language:English
Published: 2024
Subjects:
Engineering::Materials
Engineering::Electrical and electronic engineering
2D Tellurium
van der Waals Heterostructures
Online Access:https://hdl.handle.net/10356/172939

Internet

https://hdl.handle.net/10356/172939

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