Electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals heterostructure for in-sensor reservoir computing at the optical communication band
Although 2D materials are widely explored for data storage and neuromorphic computing, the construction of 2D material-based memory devices with optoelectronic responsivity in the short-wave infrared (SWIR) region for in-sensor reservoir computing (RC) at the optical communication band still remains...
| Main Authors: | , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2024
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| Online Access: | https://hdl.handle.net/10356/172939 |
| _version_ | 1811677792319832064 |
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| author | Zha, Jiajia Shi, Shuhui Chaturvedi, Apoorva Huang, Haoxin Yang, Peng Yao, Yao Li, Siyuan Xia, Yunpeng Zhang, Zhuomin Wang, Wei Wang, Huide Wang, Shaocong Yuan, Zhen Yang, Zhengbao He, Qiyuan Tai, Huiling Teo, Edwin Hang Tong Yu, Hongyu Ho, Johnny C. Wang, Zhongrui Zhang, Hua Tan, Chaoliang |
| author2 | School of Materials Science and Engineering |
| author_facet | School of Materials Science and Engineering Zha, Jiajia Shi, Shuhui Chaturvedi, Apoorva Huang, Haoxin Yang, Peng Yao, Yao Li, Siyuan Xia, Yunpeng Zhang, Zhuomin Wang, Wei Wang, Huide Wang, Shaocong Yuan, Zhen Yang, Zhengbao He, Qiyuan Tai, Huiling Teo, Edwin Hang Tong Yu, Hongyu Ho, Johnny C. Wang, Zhongrui Zhang, Hua Tan, Chaoliang |
| author_sort | Zha, Jiajia |
| collection | NTU |
| description | Although 2D materials are widely explored for data storage and neuromorphic computing, the construction of 2D material-based memory devices with optoelectronic responsivity in the short-wave infrared (SWIR) region for in-sensor reservoir computing (RC) at the optical communication band still remains a big challenge. In this work, an electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals (vdW) heterostructure is reported, where the ferroelectric CuInP2 S6 and tellurium channel endow this device with both the long-term potentiation/depression by voltage pulses and short-term potentiation by 1550 nm laser pulses (a typical wavelength in the conventional fiber optical communication band). Leveraging the rich dynamics, a fully memristive in-sensor RC system that can simultaneously sense, decode, and learn messages transmitted by optical fibers is demonstrated. The reported 2D vdW heterostructure-based memory featuring both the long-term and short-term memory behaviors using electrical and optical pulses in SWIR region has not only complemented the wide spectrum of applications of 2D materials family in electronics/optoelectronics but also paves the way for future smart signal processing systems at the edge. |
| first_indexed | 2024-10-01T02:43:00Z |
| format | Journal Article |
| id | ntu-10356/172939 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:43:00Z |
| publishDate | 2024 |
| record_format | dspace |
| spelling | ntu-10356/1729392024-01-03T04:32:51Z Electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals heterostructure for in-sensor reservoir computing at the optical communication band Zha, Jiajia Shi, Shuhui Chaturvedi, Apoorva Huang, Haoxin Yang, Peng Yao, Yao Li, Siyuan Xia, Yunpeng Zhang, Zhuomin Wang, Wei Wang, Huide Wang, Shaocong Yuan, Zhen Yang, Zhengbao He, Qiyuan Tai, Huiling Teo, Edwin Hang Tong Yu, Hongyu Ho, Johnny C. Wang, Zhongrui Zhang, Hua Tan, Chaoliang School of Materials Science and Engineering School of Electrical and Electronic Engineering Engineering::Materials Engineering::Electrical and electronic engineering 2D Tellurium van der Waals Heterostructures Although 2D materials are widely explored for data storage and neuromorphic computing, the construction of 2D material-based memory devices with optoelectronic responsivity in the short-wave infrared (SWIR) region for in-sensor reservoir computing (RC) at the optical communication band still remains a big challenge. In this work, an electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals (vdW) heterostructure is reported, where the ferroelectric CuInP2 S6 and tellurium channel endow this device with both the long-term potentiation/depression by voltage pulses and short-term potentiation by 1550 nm laser pulses (a typical wavelength in the conventional fiber optical communication band). Leveraging the rich dynamics, a fully memristive in-sensor RC system that can simultaneously sense, decode, and learn messages transmitted by optical fibers is demonstrated. The reported 2D vdW heterostructure-based memory featuring both the long-term and short-term memory behaviors using electrical and optical pulses in SWIR region has not only complemented the wide spectrum of applications of 2D materials family in electronics/optoelectronics but also paves the way for future smart signal processing systems at the edge. C.T. thanks the funding support from the National Natural Science Foundation of China – Excellent Young Scientists Fund (Hong Kong and Macau) (52122002), the Start‐Up Grant (Project No. 9610495) and Grants (Projects Nos. 9680297 and 7020013) from City University of Hong Kong, and ECS scheme (CityU 21201821) and General Research Fund (GRF: CityU 11200122) from the Research Grant Council of Hong Kong. Z.W. thanks the support from the Hong Kong Research Grant Council – Early Career Scheme (Grant No. 27206321), National Natural Science Foundation of China – Excellent Young Scientists Fund (Hong Kong and Macau) (Grant No. 62122004). H.Z. thanks the support from ITC via the Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), the Research Grants Council of Hong Kong (AoE/P‐701/20), the Start‐Up Grant (Project No. 9380100) and the grants (Project Nos. 9680314, 9678272, 7020013 and 1886921) from the City University of Hong Kong, the Science Technology and Innovation Committee of Shenzhen Municipality (grant no. JCYJ20200109143412311). 2024-01-03T04:32:50Z 2024-01-03T04:32:50Z 2023 Journal Article Zha, J., Shi, S., Chaturvedi, A., Huang, H., Yang, P., Yao, Y., Li, S., Xia, Y., Zhang, Z., Wang, W., Wang, H., Wang, S., Yuan, Z., Yang, Z., He, Q., Tai, H., Teo, E. H. T., Yu, H., Ho, J. C., ...Tan, C. (2023). Electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals heterostructure for in-sensor reservoir computing at the optical communication band. Advanced Materials, 35(20), e2211598-. https://dx.doi.org/10.1002/adma.202211598 0935-9648 https://hdl.handle.net/10356/172939 10.1002/adma.202211598 36857506 2-s2.0-85151347403 20 35 e2211598 en Advanced Materials © 2023 Wiley-VCH GmbH. All rights reserved. |
| spellingShingle | Engineering::Materials Engineering::Electrical and electronic engineering 2D Tellurium van der Waals Heterostructures Zha, Jiajia Shi, Shuhui Chaturvedi, Apoorva Huang, Haoxin Yang, Peng Yao, Yao Li, Siyuan Xia, Yunpeng Zhang, Zhuomin Wang, Wei Wang, Huide Wang, Shaocong Yuan, Zhen Yang, Zhengbao He, Qiyuan Tai, Huiling Teo, Edwin Hang Tong Yu, Hongyu Ho, Johnny C. Wang, Zhongrui Zhang, Hua Tan, Chaoliang Electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals heterostructure for in-sensor reservoir computing at the optical communication band |
| title | Electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals heterostructure for in-sensor reservoir computing at the optical communication band |
| title_full | Electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals heterostructure for in-sensor reservoir computing at the optical communication band |
| title_fullStr | Electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals heterostructure for in-sensor reservoir computing at the optical communication band |
| title_full_unstemmed | Electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals heterostructure for in-sensor reservoir computing at the optical communication band |
| title_short | Electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals heterostructure for in-sensor reservoir computing at the optical communication band |
| title_sort | electronic optoelectronic memory device enabled by tellurium based 2d van der waals heterostructure for in sensor reservoir computing at the optical communication band |
| topic | Engineering::Materials Engineering::Electrical and electronic engineering 2D Tellurium van der Waals Heterostructures |
| url | https://hdl.handle.net/10356/172939 |
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