Enhanced resistive switching characteristics of conductive bridging memory device by a Co-Cu alloy electrode

Enhanced resistive switching characteristics of conductive bridging memory device by a Co-Cu alloy electrode

One of the main challenges in the development of conductive bridging random access memory (CBRAM) is the large stochastic nature of ion movement that ultimately leads to large parameter variability. In this study, the resistive switching variability of CBRAM devices is significantly improved by empl...

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Bibliographic Details
Main Authors: Lee, Calvin Xiu Xian, Dananjaya, Putu Andhita, Chee, Mun Yin, Poh, Han Yin, Tan, Funan, Thong, Jia Rui, Liu, Lingli, Lim, Gerard Joseph, Du, Yuanmin, Tan, Juan Boon, Lew, Wen Siang
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2024
Subjects:
Science::Physics
Cobalt Alloys
Platinum Alloys
Online Access:https://hdl.handle.net/10356/173038

Internet

https://hdl.handle.net/10356/173038

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