Enhanced resistive switching characteristics of conductive bridging memory device by a Co-Cu alloy electrode
One of the main challenges in the development of conductive bridging random access memory (CBRAM) is the large stochastic nature of ion movement that ultimately leads to large parameter variability. In this study, the resistive switching variability of CBRAM devices is significantly improved by empl...
| Main Authors: | , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/173038 |