Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress

Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress

The role of pre-existing oxide in the initial degradation mechanism of AlGaN/GaN high electron mobility transistors during ON-state stressing was systematically studied. The pre-existing oxide was revealed to exist as an amorphous oxide layer consisting primarily of Ni and Ga oxides with a small amo...

Mô tả đầy đủ

Chi tiết về thư mục
Những tác giả chính: Tan, H. T., Gao, Y., Syaranamual, G. J., Sasangka, W. A., Foo, Siew Chuen, Lee, K. H., Arulkumaran, Subramaniam, Ng, Geok Ing, Thompson, C. V., Gan, Chee Lip
Tác giả khác: School of Materials Science and Engineering
Định dạng: Journal Article
Ngôn ngữ:English
Được phát hành: 2024
Những chủ đề:
Engineering::Materials
Oxide
AlGaN/GaN High Electron Mobility Transistors
Truy cập trực tuyến:https://hdl.handle.net/10356/173086

Internet

https://hdl.handle.net/10356/173086

Những quyển sách tương tự