Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates

Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates

Realization of high crystal quality GaN layers on silicon substrates requires a great control over epitaxy as well as detailed characterization of the buried defects and propagating dislocations within the epilayers. In this Letter, we present the microstructural characterization of AlxGa1−xN/GaN hi...

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Bibliographic Details
Main Authors: Aabdin, Zainul, Mahfoud, Zackaria, Razeen, Ahmed S., Hui, Hui Kim, Patil, Dharmraj K., Yuan, Gao, Ong, Jesper, Tripathy, Sudhiranjan
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2024
Subjects:
Engineering
Electron energy loss spectroscopy
Electron mobility
Online Access:https://hdl.handle.net/10356/173991

Internet

https://hdl.handle.net/10356/173991

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