Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates
Realization of high crystal quality GaN layers on silicon substrates requires a great control over epitaxy as well as detailed characterization of the buried defects and propagating dislocations within the epilayers. In this Letter, we present the microstructural characterization of AlxGa1−xN/GaN hi...
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| Format: | Journal Article |
| Language: | English |
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2024
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| Online Access: | https://hdl.handle.net/10356/173991 |
| _version_ | 1811696302412529664 |
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| author | Aabdin, Zainul Mahfoud, Zackaria Razeen, Ahmed S. Hui, Hui Kim Patil, Dharmraj K. Yuan, Gao Ong, Jesper Tripathy, Sudhiranjan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Aabdin, Zainul Mahfoud, Zackaria Razeen, Ahmed S. Hui, Hui Kim Patil, Dharmraj K. Yuan, Gao Ong, Jesper Tripathy, Sudhiranjan |
| author_sort | Aabdin, Zainul |
| collection | NTU |
| description | Realization of high crystal quality GaN layers on silicon substrates requires a great control over epitaxy as well as detailed characterization of the buried defects and propagating dislocations within the epilayers. In this Letter, we present the microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor (HEMT) structures epitaxially grown on 200 mm Si (111) substrates with superlattice (SL) buffers. The HEMT stack is also composed of an intermediate thick AlxGa1−xN layer sandwiched between the short-period and long-period AlxGa1−xN/AlN SLs. Structural and morphological characteristics of the GaN-based epilayers are studied to assess the quality of the HEMT stack grown on such 200 mm diameter substrates. The detailed microstructural uniformity of the epilayers is addressed by the transmission electron microscopy (TEM) technique. In depth scanning TEM with electron energy loss spectroscopy (EELS) investigations have been carried out to probe the microstructural quality of the HEMT stack comprising of such short- and long-period AlxGa1−xN/AlN SLs. The EELS-plasmon maps are utilized to address the sharp interface characteristics of the SL layers as well as the top active p-GaN/AlxGa1−xN/GaN layers. This work highlights the capability of high-resolution TEM as a complementing characterization method to produce reliable AlxGa1−xN/GaN HEMTs on such a large diameter silicon substrate. |
| first_indexed | 2024-10-01T07:37:12Z |
| format | Journal Article |
| id | ntu-10356/173991 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:37:12Z |
| publishDate | 2024 |
| record_format | dspace |
| spelling | ntu-10356/1739912024-03-15T15:40:13Z Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates Aabdin, Zainul Mahfoud, Zackaria Razeen, Ahmed S. Hui, Hui Kim Patil, Dharmraj K. Yuan, Gao Ong, Jesper Tripathy, Sudhiranjan School of Electrical and Electronic Engineering Institute of Materials Research and Engineering, A*STAR Engineering Electron energy loss spectroscopy Electron mobility Realization of high crystal quality GaN layers on silicon substrates requires a great control over epitaxy as well as detailed characterization of the buried defects and propagating dislocations within the epilayers. In this Letter, we present the microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor (HEMT) structures epitaxially grown on 200 mm Si (111) substrates with superlattice (SL) buffers. The HEMT stack is also composed of an intermediate thick AlxGa1−xN layer sandwiched between the short-period and long-period AlxGa1−xN/AlN SLs. Structural and morphological characteristics of the GaN-based epilayers are studied to assess the quality of the HEMT stack grown on such 200 mm diameter substrates. The detailed microstructural uniformity of the epilayers is addressed by the transmission electron microscopy (TEM) technique. In depth scanning TEM with electron energy loss spectroscopy (EELS) investigations have been carried out to probe the microstructural quality of the HEMT stack comprising of such short- and long-period AlxGa1−xN/AlN SLs. The EELS-plasmon maps are utilized to address the sharp interface characteristics of the SL layers as well as the top active p-GaN/AlxGa1−xN/GaN layers. This work highlights the capability of high-resolution TEM as a complementing characterization method to produce reliable AlxGa1−xN/GaN HEMTs on such a large diameter silicon substrate. Agency for Science, Technology and Research (A*STAR) Published version This research was supported by A*STAR 202D800032. 2024-03-11T00:55:42Z 2024-03-11T00:55:42Z 2023 Journal Article Aabdin, Z., Mahfoud, Z., Razeen, A. S., Hui, H. K., Patil, D. K., Yuan, G., Ong, J. & Tripathy, S. (2023). Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates. Applied Physics Letters, 123(14), 142104-1-142104-6. https://dx.doi.org/10.1063/5.0155944 0003-6951 https://hdl.handle.net/10356/173991 10.1063/5.0155944 2-s2.0-85174250288 14 123 142104-1 142104-6 en 202D800032. Applied Physics Letters © 2023 Author(s). Published under an exclusive license by AIP Publishing. All rights reserved. This article may be downloaded for personal use only. Any other use requires prior permission of the copyright holder. The Version of Record is available online at http://doi.org/10.1063/5.0155944 application/pdf |
| spellingShingle | Engineering Electron energy loss spectroscopy Electron mobility Aabdin, Zainul Mahfoud, Zackaria Razeen, Ahmed S. Hui, Hui Kim Patil, Dharmraj K. Yuan, Gao Ong, Jesper Tripathy, Sudhiranjan Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates |
| title | Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates |
| title_full | Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates |
| title_fullStr | Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates |
| title_full_unstemmed | Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates |
| title_short | Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates |
| title_sort | microstructural characterization of alxga1 xn gan high electron mobility transistor layers on 200 mm si 111 substrates |
| topic | Engineering Electron energy loss spectroscopy Electron mobility |
| url | https://hdl.handle.net/10356/173991 |
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