Investigation of the dynamics of NbOx-based threshold switching devices for next-generation computing and wearable electronics
As the current CMOS-based memory technologies face challenges to scale down to 10 nm node and beyond, scalable memory devices are highly sought after. The emergence of Resistive Random Access Memory (ReRAM) as a highly promising research area for next-generation non-volatile memory has garnered sign...
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| Formato: | Thesis-Doctor of Philosophy |
| Idioma: | English |
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Nanyang Technological University
2024
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| Acesso em linha: | https://hdl.handle.net/10356/174211 |