Investigation of the dynamics of NbOx-based threshold switching devices for next-generation computing and wearable electronics
As the current CMOS-based memory technologies face challenges to scale down to 10 nm node and beyond, scalable memory devices are highly sought after. The emergence of Resistive Random Access Memory (ReRAM) as a highly promising research area for next-generation non-volatile memory has garnered sign...
Main Author: | Ang, Jia Min |
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Other Authors: | Lew Wen Siang |
Format: | Thesis-Doctor of Philosophy |
Language: | English |
Published: |
Nanyang Technological University
2024
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/174211 |
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