Room-temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures

Room-temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures

The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The exploration of vdW MTJ devices with high work...

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Bibliographic Details
Main Authors: Pan, Haiyang, Singh, Anil Kumar, Zhang, Chusheng, Hu, Xueqi, Shi, Jiayu, An, Liheng, Wang, Naizhou, Duan, Ruihuan, Liu, Zheng, Parkin, Stuart S. P., Deb, Pritam, Gao, Weibo
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2024
Subjects:
Engineering
Magnetic tunnel junction
Tunneling magnetoresistance
Online Access:https://hdl.handle.net/10356/174889

Internet

https://hdl.handle.net/10356/174889

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