Heating dissipation discussion of TSV-integrated ion trap with glass interposer
In this work, we discuss the possible solutions to mitigate the temperature increase issue in TSV integrated ion trap with two approaches: (1) heat generation reduction, and (2) heat dissipation enhancement. We investigate the effect of electrical conductivity of silicon, grounding plane, number of...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/175558 |
| _version_ | 1826122257733255168 |
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| author | Zhao, Peng Bi, Xin Wen Li, Hong Yu Lim, Yu Dian Seit, Wen Wei Guidoni, Luca Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhao, Peng Bi, Xin Wen Li, Hong Yu Lim, Yu Dian Seit, Wen Wei Guidoni, Luca Tan, Chuan Seng |
| author_sort | Zhao, Peng |
| collection | NTU |
| description | In this work, we discuss the possible solutions to mitigate the temperature increase issue in TSV integrated ion trap with two approaches: (1) heat generation reduction, and (2) heat dissipation enhancement. We investigate the effect of electrical conductivity of silicon, grounding plane, number of TSV and TSV pitch towards the power loss and associated temperature increase of the ion trap. It is found that the temperature increase can be maintained below 2 K if suitable silicon substrate is used, or a grounding plane is introduced below the electrodes. As compared to the number of TSV density, the effect of TSV pitch is less significant. On the other hand, additional thermal dissipation medium is introduced apart from the original micro bumps between ion trap and interposer to enable high efficiency heat dissipation. Also, to select an appropriate interposer substrate, the relationship between the temperature increase and the thermal conductivity of interposer is evaluated. This work provides insights into the thermal management of large-scale ion trap implementation. |
| first_indexed | 2024-10-01T05:45:32Z |
| format | Conference Paper |
| id | ntu-10356/175558 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:45:32Z |
| publishDate | 2024 |
| record_format | dspace |
| spelling | ntu-10356/1755582024-04-30T05:39:35Z Heating dissipation discussion of TSV-integrated ion trap with glass interposer Zhao, Peng Bi, Xin Wen Li, Hong Yu Lim, Yu Dian Seit, Wen Wei Guidoni, Luca Tan, Chuan Seng School of Electrical and Electronic Engineering 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC) Engineering Heating systems Electron traps In this work, we discuss the possible solutions to mitigate the temperature increase issue in TSV integrated ion trap with two approaches: (1) heat generation reduction, and (2) heat dissipation enhancement. We investigate the effect of electrical conductivity of silicon, grounding plane, number of TSV and TSV pitch towards the power loss and associated temperature increase of the ion trap. It is found that the temperature increase can be maintained below 2 K if suitable silicon substrate is used, or a grounding plane is introduced below the electrodes. As compared to the number of TSV density, the effect of TSV pitch is less significant. On the other hand, additional thermal dissipation medium is introduced apart from the original micro bumps between ion trap and interposer to enable high efficiency heat dissipation. Also, to select an appropriate interposer substrate, the relationship between the temperature increase and the thermal conductivity of interposer is evaluated. This work provides insights into the thermal management of large-scale ion trap implementation. National Research Foundation (NRF) We acknowledge the funding support the National Research Foundation, Singapore, under its ANR-NRF Joint Grant Call (NRF2020-NRF-ANR073 HIT). 2024-04-30T05:39:34Z 2024-04-30T05:39:34Z 2021 Conference Paper Zhao, P., Bi, X. W., Li, H. Y., Lim, Y. D., Seit, W. W., Guidoni, L. & Tan, C. S. (2021). Heating dissipation discussion of TSV-integrated ion trap with glass interposer. 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC), 628-632. https://dx.doi.org/10.1109/EPTC53413.2021.9663904 9781665416191 978-1-6654-1619-1 https://hdl.handle.net/10356/175558 10.1109/EPTC53413.2021.9663904 2-s2.0-85124806512 628 632 en NRF2020-NRF-ANR073 HIT © 2021 IEEE. All rights reserved. |
| spellingShingle | Engineering Heating systems Electron traps Zhao, Peng Bi, Xin Wen Li, Hong Yu Lim, Yu Dian Seit, Wen Wei Guidoni, Luca Tan, Chuan Seng Heating dissipation discussion of TSV-integrated ion trap with glass interposer |
| title | Heating dissipation discussion of TSV-integrated ion trap with glass interposer |
| title_full | Heating dissipation discussion of TSV-integrated ion trap with glass interposer |
| title_fullStr | Heating dissipation discussion of TSV-integrated ion trap with glass interposer |
| title_full_unstemmed | Heating dissipation discussion of TSV-integrated ion trap with glass interposer |
| title_short | Heating dissipation discussion of TSV-integrated ion trap with glass interposer |
| title_sort | heating dissipation discussion of tsv integrated ion trap with glass interposer |
| topic | Engineering Heating systems Electron traps |
| url | https://hdl.handle.net/10356/175558 |
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