Characterization of oxide interface charges in trench field stop IGBT
Oxide interface charges is an important factor to be assessed in technology development especially for a trench-gated power device. The plasma reactive ion etching process is used to form highly vertical trenches whereby the oxide-silicon interface is often saturated by large amount of oxide interfa...
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/175647 |