Characterization of oxide interface charges in trench field stop IGBT
Oxide interface charges is an important factor to be assessed in technology development especially for a trench-gated power device. The plasma reactive ion etching process is used to form highly vertical trenches whereby the oxide-silicon interface is often saturated by large amount of oxide interfa...
Main Authors: | Sim, Zhi Lin, Chin, Wei Mien, Bong, Yi Xiang, Goh, David Eng Hui, Ngwan, Voon Cheng |
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Other Authors: | School of Materials Science and Engineering |
Format: | Conference Paper |
Language: | English |
Published: |
2024
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/175647 |
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