Scandium and Boron co-alloyed AlN thin films with improved piezoelectric and ferroelectric properties

Scandium and Boron co-alloyed AlN thin films with improved piezoelectric and ferroelectric properties

This study explores the optimization of piezoelectric and ferroelectric properties of doped aluminum nitride (AlN) films, specifically investigating the effects of scandium (Sc) and boron (B) doping. The experimental setup involves depositing a Metal-Ferroelectric-Metal (MFM) thin film stack on 200m...

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Xehetasun bibliografikoak
Egile nagusia: Wu, Cheng Lung
Beste egile batzuk: Nripan Mathews
Formatua: Final Year Project (FYP)
Hizkuntza:English
Argitaratua: Nanyang Technological University 2024
Gaiak:
Engineering
Piezoelectricity
Ferroelectricity
Aluminium scandium nitride
MEMS device
Thin film deposition
PVD reactive sputtering
Sarrera elektronikoa:https://hdl.handle.net/10356/175965

Internet

https://hdl.handle.net/10356/175965

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