Preparation of 2D dielectric F-Mica and its application in field-effect transistors
With the burgeoning parasitic effects that comes with scaling silicon-based transistors to their physical limit, silicon designers have resorted to multiple gate technologies such as gate-all-around (GAA) technology to reduce transistor gate pitch in a bid to further increase transistor density....
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2024
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| Online Access: | https://hdl.handle.net/10356/176434 |