| Summary: | With the burgeoning parasitic effects that comes with scaling silicon-based
transistors to their physical limit, silicon designers have resorted to multiple gate
technologies such as gate-all-around (GAA) technology to reduce transistor gate pitch
in a bid to further increase transistor density. However, as silicon-based transistors
approaches its fundamental limit, technologies that are beyond silicon have generated
a lot of interest due to their intrinsic properties that allow it to operate at a smaller scale
without suffering from parasitic effects. One such technology is the two-dimensional
field-effect transistor (2D FET) which utilizes 2D materials, particularly transition
metal dichalcogenides (TMD), as its channel region that has no dangling bonds. This
allows for superior carrier mobility to silicon-based transistors when body is scaled
beyond 3 nm. However, TMDs intrinsic properties cannot be benefited from a direct
implementation into current node technology. Conventional dielectrics introduce
defects that severely hamper mobility in TMDs such as Molybdenum disulfide (MoS2),
causing for poor electrical device performance. In this project, we investigate a
possible solution that utilises novel 2D material dielectrics which may aid in enabling
superior 2D FETs device performance to be unhindered. Our 2D dielectric of choice,
Fluorphlogopite (F-Mica), is first prepared into thin layers via mechanical exfoliation.
These samples are then either used in the initial material characterisation of F-Mica or
used in the device fabrication of metal-insulator-metal and 2D FET. The fabrication
process is then described at length, comprising of spin coating, photolithograph and
physical vapour deposition. The fabricated devices are then tested to study their
electrical performance in order to assess F-Mica’s viability as a 2D dielectric.
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