Preparation of 2D dielectric F-Mica and its application in field-effect transistors
With the burgeoning parasitic effects that comes with scaling silicon-based transistors to their physical limit, silicon designers have resorted to multiple gate technologies such as gate-all-around (GAA) technology to reduce transistor gate pitch in a bid to further increase transistor density....
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2024
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| Online Access: | https://hdl.handle.net/10356/176434 |
| _version_ | 1811697065564045312 |
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| author | Yau, Lucas Hong Ming |
| author2 | Tay Beng Kang |
| author_facet | Tay Beng Kang Yau, Lucas Hong Ming |
| author_sort | Yau, Lucas Hong Ming |
| collection | NTU |
| description | With the burgeoning parasitic effects that comes with scaling silicon-based
transistors to their physical limit, silicon designers have resorted to multiple gate
technologies such as gate-all-around (GAA) technology to reduce transistor gate pitch
in a bid to further increase transistor density. However, as silicon-based transistors
approaches its fundamental limit, technologies that are beyond silicon have generated
a lot of interest due to their intrinsic properties that allow it to operate at a smaller scale
without suffering from parasitic effects. One such technology is the two-dimensional
field-effect transistor (2D FET) which utilizes 2D materials, particularly transition
metal dichalcogenides (TMD), as its channel region that has no dangling bonds. This
allows for superior carrier mobility to silicon-based transistors when body is scaled
beyond 3 nm. However, TMDs intrinsic properties cannot be benefited from a direct
implementation into current node technology. Conventional dielectrics introduce
defects that severely hamper mobility in TMDs such as Molybdenum disulfide (MoS2),
causing for poor electrical device performance. In this project, we investigate a
possible solution that utilises novel 2D material dielectrics which may aid in enabling
superior 2D FETs device performance to be unhindered. Our 2D dielectric of choice,
Fluorphlogopite (F-Mica), is first prepared into thin layers via mechanical exfoliation.
These samples are then either used in the initial material characterisation of F-Mica or
used in the device fabrication of metal-insulator-metal and 2D FET. The fabrication
process is then described at length, comprising of spin coating, photolithograph and
physical vapour deposition. The fabricated devices are then tested to study their
electrical performance in order to assess F-Mica’s viability as a 2D dielectric. |
| first_indexed | 2024-10-01T07:49:20Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/176434 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:49:20Z |
| publishDate | 2024 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1764342024-05-17T15:43:59Z Preparation of 2D dielectric F-Mica and its application in field-effect transistors Yau, Lucas Hong Ming Tay Beng Kang School of Electrical and Electronic Engineering EBKTAY@ntu.edu.sg Engineering F-Mica Semiconductor 2D FET With the burgeoning parasitic effects that comes with scaling silicon-based transistors to their physical limit, silicon designers have resorted to multiple gate technologies such as gate-all-around (GAA) technology to reduce transistor gate pitch in a bid to further increase transistor density. However, as silicon-based transistors approaches its fundamental limit, technologies that are beyond silicon have generated a lot of interest due to their intrinsic properties that allow it to operate at a smaller scale without suffering from parasitic effects. One such technology is the two-dimensional field-effect transistor (2D FET) which utilizes 2D materials, particularly transition metal dichalcogenides (TMD), as its channel region that has no dangling bonds. This allows for superior carrier mobility to silicon-based transistors when body is scaled beyond 3 nm. However, TMDs intrinsic properties cannot be benefited from a direct implementation into current node technology. Conventional dielectrics introduce defects that severely hamper mobility in TMDs such as Molybdenum disulfide (MoS2), causing for poor electrical device performance. In this project, we investigate a possible solution that utilises novel 2D material dielectrics which may aid in enabling superior 2D FETs device performance to be unhindered. Our 2D dielectric of choice, Fluorphlogopite (F-Mica), is first prepared into thin layers via mechanical exfoliation. These samples are then either used in the initial material characterisation of F-Mica or used in the device fabrication of metal-insulator-metal and 2D FET. The fabrication process is then described at length, comprising of spin coating, photolithograph and physical vapour deposition. The fabricated devices are then tested to study their electrical performance in order to assess F-Mica’s viability as a 2D dielectric. Bachelor's degree 2024-05-16T13:18:44Z 2024-05-16T13:18:44Z 2024 Final Year Project (FYP) Yau, L. H. M. (2024). Preparation of 2D dielectric F-Mica and its application in field-effect transistors. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/176434 https://hdl.handle.net/10356/176434 en B2221-231 application/pdf Nanyang Technological University |
| spellingShingle | Engineering F-Mica Semiconductor 2D FET Yau, Lucas Hong Ming Preparation of 2D dielectric F-Mica and its application in field-effect transistors |
| title | Preparation of 2D dielectric F-Mica and its application in field-effect transistors |
| title_full | Preparation of 2D dielectric F-Mica and its application in field-effect transistors |
| title_fullStr | Preparation of 2D dielectric F-Mica and its application in field-effect transistors |
| title_full_unstemmed | Preparation of 2D dielectric F-Mica and its application in field-effect transistors |
| title_short | Preparation of 2D dielectric F-Mica and its application in field-effect transistors |
| title_sort | preparation of 2d dielectric f mica and its application in field effect transistors |
| topic | Engineering F-Mica Semiconductor 2D FET |
| url | https://hdl.handle.net/10356/176434 |
| work_keys_str_mv | AT yaulucashongming preparationof2ddielectricfmicaanditsapplicationinfieldeffecttransistors |