GaN based high mobility electron transistors with regrown ohmic contacts
Gallium Nitride (GaN) based high mobility electron transistors (HEMT) has been heavily researched in recent times for its superior capabilities compared to Silicon and that there are still many untapped potentials behind it. To achieve devices with superior performance, good ohmic contacts with low...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2024
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| Online Access: | https://hdl.handle.net/10356/176547 |