Variation tolerant sensing circuits for resistive memory

Resistive memory is gaining its popularity as an alternative to the flash in non-volatile memory owing to several significant advantages. However, resistive fluctuations due to resistive layer within ReRAM and fabrication process affect the performance of ReRAM. Therefore, various sensing schemes ar...

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Bibliographic Details
Main Author: Chong, Yu Ze
Other Authors: Kim Tae Hyoung
Format: Final Year Project (FYP)
Language:English
Published: Nanyang Technological University 2024
Subjects:
Online Access:https://hdl.handle.net/10356/176605