Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)
GaN (Gallium Nitride) on High Electron Mobility Transistors (HEMTs) has been developed since the early 2000s, however, it is not till recent times that it is commercialised and used for an impressive array of technologically advanced advents. This project delves into the burgeoning field of Gallium...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
Nanyang Technological University
2024
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/177182 |