Pulsed current-voltage characteristics of AlGaN/GaN high-electron-mobility-transistors on HR-Si substrate
In recent years, much research has been carried out on AlGaN/GaN high-electron-mobility transistors (HEMTs) on high resistivity (HR) silicon substrate. AlGaN/GaN HEMT is popular for its advantages for high-power and high-frequency applications. Though AlGaN/GaN HEMT showed high power performance [3]...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/10356/17756 |