Programmable ferroelectricity in Hf0.5Zr0.5O2 enabled by oxygen defect engineering

Programmable ferroelectricity in Hf0.5Zr0.5O2 enabled by oxygen defect engineering

Ferroelectricity, especially the Si-compatible type recently observed in hafnia-based materials, is technologically useful for modern memory and logic applications, but it is challenging to differentiate intrinsic ferroelectric polarization from the polar phase and oxygen vacancy. Here, we report el...

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Bibliographic Details
Main Authors: Shao, Minghao, Liu, Houfang, He, Ri, Li, Xiaomei, Wu, Liang, Ma, Ji, Ye, Chen, Hu, Xiangchen, Zhao, Ruiting, Zhong, Zhicheng, Yu, Yi, Wan, Caihua, Yang, Yi, Nan, Ce-Wen, Bai, Xuedong, Ren, Tian-Ling, Wang, Renshaw Xiao
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2024
Subjects:
Engineering
Ferroelectric HZO
Oxygen defect
Online Access:https://hdl.handle.net/10356/178205

Internet

https://hdl.handle.net/10356/178205

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