Laser annealing of oxide capped Si/Ni nanowire

Laser annealing of semiconductor nanowires has opened new possibilities for crystal growth, alloying and novel structure in the rapid miniaturization of microelectronics. The use of laser processing techniques offers a unique control of the heat flow into the material. Different beam delivery system...

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Bibliographic Details
Main Author: Lin, Juncheng.
Other Authors: Pey Kin Leong
Format: Final Year Project (FYP)
Language:English
Published: 2009
Subjects:
Online Access:http://hdl.handle.net/10356/17824