Unraveling the origins of the coexisting localized-interfacial mechanism in oxide-based memristors in CMOS-integrated synaptic device implementations

Unraveling the origins of the coexisting localized-interfacial mechanism in oxide-based memristors in CMOS-integrated synaptic device implementations

The forefront of neuromorphic research strives to develop devices with specific properties, i.e., linear and symmetrical conductance changes under external stimuli. This is paramount for neural network accuracy when emulating a biological synapse. A parallel exploration of resistive memory as a repl...

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Detalles Bibliográficos
Autores principales: Koh, Eng Kang, Dananjaya, Putu Andhita, Poh, Han Yin, Liu, Lingli, Lee, Calvin Xiu Xian, Thong, Jia Rui, You, Young Seon, Lew, Wen Siang
Otros Autores: School of Physical and Mathematical Sciences
Formato: Journal Article
Lenguaje:English
Publicado: 2024
Materias:
Physics
Memristor
Interfacial mechanism
Acceso en línea:https://hdl.handle.net/10356/178271

Internet

https://hdl.handle.net/10356/178271

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