Enhanced performance of metal-semiconductor-metal UV photodetectors on Algan/Gan Hemt structure via periodic nanohole patterning

Enhanced performance of metal-semiconductor-metal UV photodetectors on Algan/Gan Hemt structure via periodic nanohole patterning

AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high-performance Ultraviolet photodetectors (UV PDs), especially using the metal-semiconductor-metal (MSM) configuration. However, the metal lay...

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Bibliographic Details
Main Authors: Razeen, Ahmed S., Kotekar-Patil, Dharmraj, Jiang, Mengting, Tang, Eric X., Yuan, Gao, Ong, Jesper, Wyen, Viet C., Radhakrishnan, K., Tripathy, Sudhiranjan
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2024
Subjects:
Engineering
Nanoholes
Nanophotonics
Online Access:https://hdl.handle.net/10356/178704

Internet

https://hdl.handle.net/10356/178704

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