Enhanced performance of metal-semiconductor-metal UV photodetectors on Algan/Gan Hemt structure via periodic nanohole patterning
AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high-performance Ultraviolet photodetectors (UV PDs), especially using the metal-semiconductor-metal (MSM) configuration. However, the metal lay...
| Główni autorzy: | , , , , , , , , |
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| Kolejni autorzy: | |
| Format: | Journal Article |
| Język: | English |
| Wydane: |
2024
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| Hasła przedmiotowe: | |
| Dostęp online: | https://hdl.handle.net/10356/178704 |
| _version_ | 1826117595163525120 |
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| author | Razeen, Ahmed S. Kotekar-Patil, Dharmraj Jiang, Mengting Tang, Eric X. Yuan, Gao Ong, Jesper Wyen, Viet C. Radhakrishnan, K. Tripathy, Sudhiranjan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Razeen, Ahmed S. Kotekar-Patil, Dharmraj Jiang, Mengting Tang, Eric X. Yuan, Gao Ong, Jesper Wyen, Viet C. Radhakrishnan, K. Tripathy, Sudhiranjan |
| author_sort | Razeen, Ahmed S. |
| collection | NTU |
| description | AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high-performance Ultraviolet photodetectors (UV PDs), especially using the metal-semiconductor-metal (MSM) configuration. However, the metal layout of the MSM design and crystal defects in multi-stack HEMTs can reduce photocurrent and degrade device performance. Nano-structuring of the AlGaN/GaN surface with different nanofeatures is a promising approach to improve light absorption efficiency and increase device response. In this work, AlGaN/GaN HEMT MSM UV photodetectors with enhanced performance parameters by engineering the surface with periodic nanohole arrays are demonstrated. Optical simulations are used to optimize the design of the nanoholes' periodicity and depth. Unpatterned and nanohole-patterned devices with varying nanohole depths are fabricated, and their performance shows substantial enhancement with the incorporation of nanoholes. The device with 40 nm deep nanoholes and 230 nm array periodicity shows the highest performance in terms of photocurrent (0.15 mA), responsivity (1.4 × 105 A W−1), UV/visible rejection ratio (≈103), and specific detectivity (4.9 × 1014 Jones). These findings present a HEMT-compatible strategy to enhance UV photodetector performance for power optoelectronic applications, highlighting that nanohole patterning is a promising prospect for advancements in UV photodetection technology. |
| first_indexed | 2024-10-01T04:29:53Z |
| format | Journal Article |
| id | ntu-10356/178704 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:29:53Z |
| publishDate | 2024 |
| record_format | dspace |
| spelling | ntu-10356/1787042024-07-05T15:39:40Z Enhanced performance of metal-semiconductor-metal UV photodetectors on Algan/Gan Hemt structure via periodic nanohole patterning Razeen, Ahmed S. Kotekar-Patil, Dharmraj Jiang, Mengting Tang, Eric X. Yuan, Gao Ong, Jesper Wyen, Viet C. Radhakrishnan, K. Tripathy, Sudhiranjan School of Electrical and Electronic Engineering Institute of Materials Research and Engineering, A*STAR Center for Micro/Nano-electronics Engineering Nanoholes Nanophotonics AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high-performance Ultraviolet photodetectors (UV PDs), especially using the metal-semiconductor-metal (MSM) configuration. However, the metal layout of the MSM design and crystal defects in multi-stack HEMTs can reduce photocurrent and degrade device performance. Nano-structuring of the AlGaN/GaN surface with different nanofeatures is a promising approach to improve light absorption efficiency and increase device response. In this work, AlGaN/GaN HEMT MSM UV photodetectors with enhanced performance parameters by engineering the surface with periodic nanohole arrays are demonstrated. Optical simulations are used to optimize the design of the nanoholes' periodicity and depth. Unpatterned and nanohole-patterned devices with varying nanohole depths are fabricated, and their performance shows substantial enhancement with the incorporation of nanoholes. The device with 40 nm deep nanoholes and 230 nm array periodicity shows the highest performance in terms of photocurrent (0.15 mA), responsivity (1.4 × 105 A W−1), UV/visible rejection ratio (≈103), and specific detectivity (4.9 × 1014 Jones). These findings present a HEMT-compatible strategy to enhance UV photodetector performance for power optoelectronic applications, highlighting that nanohole patterning is a promising prospect for advancements in UV photodetection technology. Published version 2024-07-03T00:44:39Z 2024-07-03T00:44:39Z 2024 Journal Article Razeen, A. S., Kotekar-Patil, D., Jiang, M., Tang, E. X., Yuan, G., Ong, J., Wyen, V. C., Radhakrishnan, K. & Tripathy, S. (2024). Enhanced performance of metal-semiconductor-metal UV photodetectors on Algan/Gan Hemt structure via periodic nanohole patterning. Advanced Materials Interfaces, 11(9), 2300726-. https://dx.doi.org/10.1002/admi.202300726 2196-7350 https://hdl.handle.net/10356/178704 10.1002/admi.202300726 2-s2.0-85181708952 9 11 2300726 en Advanced Materials Interfaces © 2024 The Authors. Advanced Materials Interfaces published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. application/pdf |
| spellingShingle | Engineering Nanoholes Nanophotonics Razeen, Ahmed S. Kotekar-Patil, Dharmraj Jiang, Mengting Tang, Eric X. Yuan, Gao Ong, Jesper Wyen, Viet C. Radhakrishnan, K. Tripathy, Sudhiranjan Enhanced performance of metal-semiconductor-metal UV photodetectors on Algan/Gan Hemt structure via periodic nanohole patterning |
| title | Enhanced performance of metal-semiconductor-metal UV photodetectors on Algan/Gan Hemt structure via periodic nanohole patterning |
| title_full | Enhanced performance of metal-semiconductor-metal UV photodetectors on Algan/Gan Hemt structure via periodic nanohole patterning |
| title_fullStr | Enhanced performance of metal-semiconductor-metal UV photodetectors on Algan/Gan Hemt structure via periodic nanohole patterning |
| title_full_unstemmed | Enhanced performance of metal-semiconductor-metal UV photodetectors on Algan/Gan Hemt structure via periodic nanohole patterning |
| title_short | Enhanced performance of metal-semiconductor-metal UV photodetectors on Algan/Gan Hemt structure via periodic nanohole patterning |
| title_sort | enhanced performance of metal semiconductor metal uv photodetectors on algan gan hemt structure via periodic nanohole patterning |
| topic | Engineering Nanoholes Nanophotonics |
| url | https://hdl.handle.net/10356/178704 |
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