Studies on high frequency performance of advanced Si MOSFETs
This final year project studied degradation mechanisms contributing to the increased high frequency noise of deep-submicrometer nMOSFETs after different hot-carrier (HC) stresses. An HP4156B semiconductor parameter analyzer was used for dc measurement and HC stress. Three groups of devices were stre...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/10356/17951 |