TCAD simulation of tunnel FET devices
As the conventional metal oxide semiconductor field-effect transistor (MOSFET) keep scaling down to a sub-micron dimension, it became a serious problem. To overcome this problem, devices based on tunneling currents have been proposed as the candidate of MOSFET. The tunnel field-effect transistor (TF...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/10356/17964 |