Double-gated CNTFETs with Al2O3/Si3N4 as gate dielectrics
This report focuses on fabrication and investigation of double-gated Carbon Nanotube Field-Effect-Transistors (CNTFETs) in which both partial top gate and global back gate are fabricated on the same device. Two design structures were fabricated to compare improvements of high K dielectric material o...
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| Formato: | Final Year Project (FYP) |
| Lenguaje: | English |
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2009
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| Acceso en línea: | http://hdl.handle.net/10356/17999 |