Device simulation study of lateral Schottky collector phototransistor (SCPT)
This report documents the device simulation study of lateral Schottky Collector Phototransistor (SCPT). In silicon-on-insulator (SOI) waveguide-based photodetector, Schottky-barrier Photodiode (SPD) owns some advantages over the Ge-photodetector, such as longer cut-off wavelength, ease fabrication...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2009
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/18008 |