Design and analysis of robust sensing schemes for resisitive memory

Design and analysis of robust sensing schemes for resisitive memory

Representatively, memory has been limitedly used in advances, such as Dynamic Random Access Memory (DRAM), Static Random Access Memory (SRAM), and Flash Memory. However, nowadays, memory is widely used in smartphones, automobiles, and the Internet of Things (IoT) in everyday electronic devices. Furt...

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Bibliographic Details
Main Author: An, Byungkwon
Other Authors: Kim Tae Hyoung
Format: Thesis-Doctor of Philosophy
Language:English
Published: Nanyang Technological University 2024
Subjects:
Engineering
Resistive random-access memory (RRAM)
Sensing scheme
Emerging non-volatile memories (eNVMs)
Resistance ratio (R-Ratio)
Resistive memory
Time-based sensing scheme
Hybrid cell-to-cell comparison-based sensing scheme
Non-volatile memories
Computing in memory (CIM)
Multiply-and-accumulate (MAC)
Phase-change random access memory (PRAM)
Spin-transfer torque magnetic random-access memory (STT-RAM)
Memory integrated circuit
Multi-level cells (MLC)
Online Access:https://hdl.handle.net/10356/181559

Internet

https://hdl.handle.net/10356/181559

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