Characterization and modelling of silicon nanowire based diode
Silicon nanowires (SiNWs) research has intensified over the past decade with the advancement in nanowires fabrication technology. The objective of this study is to characterize SiNWs diodes under dark and illuminated conditions to gain an understanding of the nanoscale junction devices. Two type...
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Format: | Final Year Project (FYP) |
Language: | English |
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2009
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Online Access: | http://hdl.handle.net/10356/18191 |