Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy

Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy

The growth instabilities of N-polar GaN on vicinal SiC substrates with an offcut angle of 4° towards the m-plane using plasma-assisted molecular beam epitaxy (PA-MBE) were systematically studied. The morphology with the coexistence of step bunching and step meandering was demonstrated experimentally...

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Bibliographic Details
Main Authors: Huo, Lili, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2025
Subjects:
Engineering
N-polar Gallium nitride
Vicinal substrate
Online Access:https://hdl.handle.net/10356/182295

Internet

https://hdl.handle.net/10356/182295

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