Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs

Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs

The role of ex-situ HfO2 passivation in in-situ Si3N4/AlN/GaN-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) to improve the device performance and protect the device from severe degradation under high-energy X-ray irradiation has been investigated. Here, the root...

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Bibliographic Details
Main Authors: Dalapati, Pradip, Li, Hanchao, Arulkumaran, Subramaniam, Ng, Geok Ing
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2025
Subjects:
Engineering
X-ray-induced defect formation
Charge trapping
Online Access:https://hdl.handle.net/10356/182502

Internet

https://hdl.handle.net/10356/182502

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