Scalable compact modeling for nanometer CMOS technology
This thesis documents the compact model developed for bulk MOSFET and double-gate MOSFET. The unified regional modeling approach is used in the physics-based scalable model development for bulk and double-gate MOSFETs. Surface potential models are developed regionally in accumulation, weak accumulat...
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| Format: | Thesis |
| Language: | English |
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2009
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| Online Access: | https://hdl.handle.net/10356/18733 |