Ferroelectric Lead Zirconate Titanate (PZT) thin films by metallo-organic decomposition (MOD) technology for memory applications
Ferroelectric thin film materials have had a strong resurgence and development in recent years, primarily because of their attractive properties of their high dielectric constant and reversible, large remnant polarization for non-volatile random access memory (NV-RAM) and dynamic random access me...
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| Format: | Thesis |
| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/10356/19645 |