Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy

Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy

Molecular beam epitaxial growth of In0.52Al0.48As epilayer on InP(100) substrate at a wide range of substrate temperatures (470-550 degrees celcius) and at arsenic overpressure (V/III ratio) which is higher than previously reported is carried out. Analysis performed using low temperature (4 K) photo...

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Bibliographic Details
Main Author: Miao, Yubo.
Other Authors: Yoon, Soon Fatt
Format: Thesis
Language:English
Published: 2009
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:http://hdl.handle.net/10356/19674

Internet

http://hdl.handle.net/10356/19674

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