Diamond film growth by microwave plasma enhanced chemical vapour deposition

Diamond particles and continuous films have been successfully grown by Microwave Plasma Enhanced Chemical Vapour Deposition (MPECVD). The particles and films were characterised using scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. Current-Voltage measurement...

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Bibliographic Details
Main Author: Tan, Fong Hock.
Other Authors: Jaeshin, Ahn
Format: Thesis
Language:English
Published: 2009
Subjects:
Online Access:http://hdl.handle.net/10356/19689
Description
Summary:Diamond particles and continuous films have been successfully grown by Microwave Plasma Enhanced Chemical Vapour Deposition (MPECVD). The particles and films were characterised using scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. Current-Voltage measurement and secondary ions mass spectrometry were being used to verify the presence of boron in the boron-doped diamond film. Silicon (Si) is mainly used as a substrate for the experimental studies.