Characterisation of compound semiconductors grown by molecular beam epitaxy

Characterisation of compound semiconductors grown by molecular beam epitaxy

In this thesis, molecular beam epitaxy (MBE)growth, the optical and luminescence properties and crystalline quality of Ini.x.yGaxAlyAs layers on InP (100)substrates are studied.

Bibliographic Details
Main Author: Zhang, Peng Hua
Other Authors: Yoon, Soon Fatt
Format: Thesis
Language:English
Published: 2009
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:http://hdl.handle.net/10356/19771

Internet

http://hdl.handle.net/10356/19771

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