Characterisation of compound semiconductors grown by molecular beam epitaxy
In this thesis, molecular beam epitaxy (MBE)growth, the optical and luminescence properties and crystalline quality of Ini.x.yGaxAlyAs layers on InP (100)substrates are studied.
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| Other Authors: | |
| Format: | Thesis |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/10356/19771 |
| _version_ | 1811686259485048832 |
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| author | Zhang, Peng Hua |
| author2 | Yoon, Soon Fatt |
| author_facet | Yoon, Soon Fatt Zhang, Peng Hua |
| author_sort | Zhang, Peng Hua |
| collection | NTU |
| description | In this thesis, molecular beam epitaxy (MBE)growth, the optical and luminescence properties and crystalline quality of Ini.x.yGaxAlyAs layers on InP (100)substrates are studied. |
| first_indexed | 2024-10-01T04:57:35Z |
| format | Thesis |
| id | ntu-10356/19771 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:57:35Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | ntu-10356/197712023-07-04T15:39:49Z Characterisation of compound semiconductors grown by molecular beam epitaxy Zhang, Peng Hua Yoon, Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors In this thesis, molecular beam epitaxy (MBE)growth, the optical and luminescence properties and crystalline quality of Ini.x.yGaxAlyAs layers on InP (100)substrates are studied. Master of Engineering 2009-12-14T06:37:04Z 2009-12-14T06:37:04Z 1998 1998 Thesis http://hdl.handle.net/10356/19771 en Nanyang Technological University 106 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Zhang, Peng Hua Characterisation of compound semiconductors grown by molecular beam epitaxy |
| title | Characterisation of compound semiconductors grown by molecular beam epitaxy |
| title_full | Characterisation of compound semiconductors grown by molecular beam epitaxy |
| title_fullStr | Characterisation of compound semiconductors grown by molecular beam epitaxy |
| title_full_unstemmed | Characterisation of compound semiconductors grown by molecular beam epitaxy |
| title_short | Characterisation of compound semiconductors grown by molecular beam epitaxy |
| title_sort | characterisation of compound semiconductors grown by molecular beam epitaxy |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
| url | http://hdl.handle.net/10356/19771 |
| work_keys_str_mv | AT zhangpenghua characterisationofcompoundsemiconductorsgrownbymolecularbeamepitaxy |