Characterisation of compound semiconductors grown by molecular beam epitaxy
In this thesis, molecular beam epitaxy (MBE)growth, the optical and luminescence properties and crystalline quality of Ini.x.yGaxAlyAs layers on InP (100)substrates are studied.
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| Format: | Thesis |
| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/10356/19771 |