Photoluminescence studies of compound semiconductor structures grown by molecular beam epitaxy
Low temperature photoluminescence measurements were carried out on Be doped GaAs layers and strained InGaAs/(Al)GaAs heterostructures grown by MBE. PL results demonstrate that the main emission associated with Be acceptors moves to a lower energy with increase in the hole concentration. This may be...
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| Format: | Thesis |
| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/10356/19789 |