Evaluation of process requirements for room temperature direct copper bonding
Direct metal bonding is a method of joining two metal surfaces under ambient conditions without an intermediate layer in between. In this thesis, by coating the copper surface with a self assembled monolayer of alkanethiol prior to bonding, Cu joints can be successfully formed at room temperature in...
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| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/10356/20415 |
| _version_ | 1824454052452237312 |
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| author | Chen, Qiang. |
| author2 | Wong Chee Cheong |
| author_facet | Wong Chee Cheong Chen, Qiang. |
| author_sort | Chen, Qiang. |
| collection | NTU |
| description | Direct metal bonding is a method of joining two metal surfaces under ambient conditions without an intermediate layer in between. In this thesis, by coating the copper surface with a self assembled monolayer of alkanethiol prior to bonding, Cu joints can be successfully formed at room temperature in ambient environment, yielding joint shear strength up to 60MPa.
Copper bond shear strength of 15 MPa is achieved even at 50MPa at 25°C with copper coated with C18.
The densely packed monolayer serves to passivate the copper surface against oxidation under ambient conditions. The ultrathin (1-3 nm) organic monolayer structure, as compared to a bulk oxide layer, could be easily displaced during the mechanical deformation at the bonding interface.
Preliminary results have shown copper samples bond even at room temperature with SAMs. Such promising results demonstrate great potential in reducing thermal budget in 3-D integrated devices, thus translating to better reliability and performance device. |
| first_indexed | 2025-02-19T03:16:11Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/20415 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:16:11Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | ntu-10356/204152023-03-04T15:33:37Z Evaluation of process requirements for room temperature direct copper bonding Chen, Qiang. Wong Chee Cheong School of Materials Science and Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Direct metal bonding is a method of joining two metal surfaces under ambient conditions without an intermediate layer in between. In this thesis, by coating the copper surface with a self assembled monolayer of alkanethiol prior to bonding, Cu joints can be successfully formed at room temperature in ambient environment, yielding joint shear strength up to 60MPa. Copper bond shear strength of 15 MPa is achieved even at 50MPa at 25°C with copper coated with C18. The densely packed monolayer serves to passivate the copper surface against oxidation under ambient conditions. The ultrathin (1-3 nm) organic monolayer structure, as compared to a bulk oxide layer, could be easily displaced during the mechanical deformation at the bonding interface. Preliminary results have shown copper samples bond even at room temperature with SAMs. Such promising results demonstrate great potential in reducing thermal budget in 3-D integrated devices, thus translating to better reliability and performance device. Bachelor of Engineering (Materials Engineering) 2009-12-15T02:55:19Z 2009-12-15T02:55:19Z 2009 2009 Final Year Project (FYP) http://hdl.handle.net/10356/20415 en Nanyang Technological University 48 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Chen, Qiang. Evaluation of process requirements for room temperature direct copper bonding |
| title | Evaluation of process requirements for room temperature direct copper bonding |
| title_full | Evaluation of process requirements for room temperature direct copper bonding |
| title_fullStr | Evaluation of process requirements for room temperature direct copper bonding |
| title_full_unstemmed | Evaluation of process requirements for room temperature direct copper bonding |
| title_short | Evaluation of process requirements for room temperature direct copper bonding |
| title_sort | evaluation of process requirements for room temperature direct copper bonding |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects |
| url | http://hdl.handle.net/10356/20415 |
| work_keys_str_mv | AT chenqiang evaluationofprocessrequirementsforroomtemperaturedirectcopperbonding |