Device design, characterization and modeling of inductors and interconnects for RFIC applications
Escalating demands for personal wireless communication equipment have spearheaded development of affordable RF System-on-Chip (SoC) solutions. Silicon is believed to be the most suitable material that can satisfy the demands of this rapidly growing wireless market. Advancements in technology have co...
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Format: | Thesis |
Language: | English |
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2009
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Online Access: | https://hdl.handle.net/10356/20669 |
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author | Sia, Choon Beng |
author2 | Yeo Kiat Seng |
author_facet | Yeo Kiat Seng Sia, Choon Beng |
author_sort | Sia, Choon Beng |
collection | NTU |
description | Escalating demands for personal wireless communication equipment have spearheaded development of affordable RF System-on-Chip (SoC) solutions. Silicon is believed to be the most suitable material that can satisfy the demands of this rapidly growing wireless market. Advancements in technology have continued to enhance the cutoff frequencies of active devices such as MOSFETs and SiGe HBTs. Nonetheless, low resistive bulk silicon and high resistive metallization have made on-chip inductors and interconnects major obstacles to achieving exemplary circuit characteristics at giga-hertz frequencies. |
first_indexed | 2024-10-01T07:10:58Z |
format | Thesis |
id | ntu-10356/20669 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T07:10:58Z |
publishDate | 2009 |
record_format | dspace |
spelling | ntu-10356/206692023-07-04T16:52:08Z Device design, characterization and modeling of inductors and interconnects for RFIC applications Sia, Choon Beng Yeo Kiat Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Escalating demands for personal wireless communication equipment have spearheaded development of affordable RF System-on-Chip (SoC) solutions. Silicon is believed to be the most suitable material that can satisfy the demands of this rapidly growing wireless market. Advancements in technology have continued to enhance the cutoff frequencies of active devices such as MOSFETs and SiGe HBTs. Nonetheless, low resistive bulk silicon and high resistive metallization have made on-chip inductors and interconnects major obstacles to achieving exemplary circuit characteristics at giga-hertz frequencies. DOCTOR OF PHILOSOPHY (EEE) 2009-12-22T06:20:02Z 2009-12-22T06:20:02Z 2008 2008 Thesis Sia, C. B. (2008). Device design, characterization and modeling of inductors and interconnects for RFIC applications. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/20669 10.32657/10356/20669 en 226 p. application/pdf |
spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Sia, Choon Beng Device design, characterization and modeling of inductors and interconnects for RFIC applications |
title | Device design, characterization and modeling of inductors and interconnects for RFIC applications |
title_full | Device design, characterization and modeling of inductors and interconnects for RFIC applications |
title_fullStr | Device design, characterization and modeling of inductors and interconnects for RFIC applications |
title_full_unstemmed | Device design, characterization and modeling of inductors and interconnects for RFIC applications |
title_short | Device design, characterization and modeling of inductors and interconnects for RFIC applications |
title_sort | device design characterization and modeling of inductors and interconnects for rfic applications |
topic | DRNTU::Engineering::Electrical and electronic engineering |
url | https://hdl.handle.net/10356/20669 |
work_keys_str_mv | AT siachoonbeng devicedesigncharacterizationandmodelingofinductorsandinterconnectsforrficapplications |