Monolithic integration of heterojunction bipolar transistors and high electron mobility transistors

In this investigation, studies were undertaken for the possibility of monolithic integration of HEMTs and HBTs.

Bibliographic Details
Main Authors:	Radhakrishnan, K., Ng, Geok Ing., Yoon, Soon Fatt.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Research Report
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:	http://hdl.handle.net/10356/2822

Internet

http://hdl.handle.net/10356/2822